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| CXT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING CODE: FULL PART NUMBER SOT-89 CASE APPLICATIONS: * General purpose switching and amplification * Telephone applications FEATURES: * High Collector Breakdown Voltage 250V * Low Leakage Current 50nA Max * Low Saturation Voltage 150mV Max @ 50mA * Complementary Device CXT5551E * SOT-89 Surface Mount Package MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA 250 220 7.0 600 1.2 -65 to +150 104 UNITS V V V mA W C C/W SYMBOL ICBO ICBO ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=120V VCB=120V, TA=100C VEB=3.0V IC=100A IC=1.0mA IE=10A IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IC=50mA, IB=1.0mA IB=5.0mA 250 220 7.0 MAX 50 50 50 UNITS nA A nA V V V BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) IEBO 100 150 1.00 1.00 mV mV V V Enhanced Specification R0 (10-May 2006) Central TM CXT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR Semiconductor Corp. SYMBOL ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=150mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200A, RS=10 f=10Hz to 15.7kHz 100 100 75 25 100 40 MAX UNITS hFE hFE hFE hFE fT Cob hfe NF 300 300 6.0 200 8.0 MHz pF dB Enhanced Specification SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: FULL PART NUMBER R0 (10-May 2006) |
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